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Autori: Dankovic Danijel M

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Naslov A method for negative bias temperature instability (NBTI) measurements on power VDMOS transistors (Article)
Autori Prijic Aneta P Dankovic Danijel M Vracar Ljubomir M Manic Ivica Dj Prijic Zoran D Stojadinovic Ninoslav D 
Info MEASUREMENT SCIENCE & TECHNOLOGY, (2012), vol. 23 br. 8, str. -
Projekat Serbian Ministry of Education and Science[OI171026, TR32026]; Ei PCB Factory, Nis
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static and pulsed NBT stress conditions (Article)
Autori Manic Ivica Dj Dankovic Danijel M Prijic Aneta P Davidovic Vojkan S Djoric-Veljkovic Snezana M Golubovic Snezana M Prijic Zoran D Stojadinovic Ninoslav D 
Info MICROELECTRONICS RELIABILITY, (2011), vol. 51 br. 9-11, str. 1540-1543
Projekat Ministry of Science of the Republic of Serbia[0171026, TR32026]
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Annealing of Radiation-induced Defects in Burn-in Stressed Power Vdmosfets (Article)
Autori Djoric-Veljkovic Snezana M Manic Ivica Dj Davidovic Vojkan S Dankovic Danijel M Golubovic Snezana M Stojadinovic Ninoslav D 
Info NUCLEAR TECHNOLOGY & RADIATION PROTECTION, (2011), vol. 26 br. 1, str. 18-24
Projekat Ministry of Science and Technological Development of Republic of Serbia
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Threshold voltage instabilities in p-channel power VDMOSFETs under pulsed NBT stress (Proceedings Paper)
Autori Stojadinovic Ninoslav D Dankovic Danijel M Manic Ivica Dj Prijic Aneta P Davidovic Vojkan S Djoric-Veljkovic Snezana M Golubovic Snezana M Prijic Zoran D 
Info MICROELECTRONICS RELIABILITY, (2010), vol. 50 br. 9-11, str. 1278-1282
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Effects of low gate bias annealing in NBT stressed p-channel power VDMOSFETs (Proceedings Paper)
Autori Manic Ivica Dj Dankovic Danijel M Djoric-Veljkovic Snezana M Davidovic Vojkan S Golubovic Snezana M Stojadinovic Ninoslav D 
Info MICROELECTRONICS RELIABILITY, (2009), vol. 49 br. 9-11, str. 1003-1007
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Negative bias temperature instability in n-channel power VDMOSFETs (Proceedings Paper)
Autori Dankovic Danijel M Manic Ivica Dj Davidovic Vojkan S Djoric-Veljkovic Snezana M Golubovic Snezana M Stojadinovic Ninoslav D 
Info MICROELECTRONICS RELIABILITY, (2008), vol. 48 br. 8-9, str. 1313-1317
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double-Diffused Metal-Oxide-Semiconductor Transistors (Article)
Autori Davidovic Vojkan S Stojadinovic Ninoslav D Dankovic Danijel M Golubovic Snezana M Manic Ivica Dj Djoric-Veljkovic Snezana M Dimitrijev Sima 
Info JAPANESE JOURNAL OF APPLIED PHYSICS, (2008), vol. 47 br. 8, str. 6272-6276
Projekat Ministry of Science of the Republic of Serbia
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov New approach in estimating the lifetime in NBT stressed p-channel power VDMOSFETs (Proceedings Paper)
Autori Dankovic Danijel M Manic Ivica Dj Davidovic Vojkan S Djoric-Veljkovic Snezana M Golubovic Snezana M Stojadinovic Ninoslav D 
Info 2008 26TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, (2008), vol. br. , str. 599-602
Ispravka Web of Science   Citati: Web of Science  
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Naslov Mechanisms of spontaneous recovery in DC gate bias stressed power VDMOSFETs (Article)
Autori Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S Dankovic Danijel M Golubovic Snezana M Stojadinovic Ninoslav D 
Info IET CIRCUITS DEVICES & SYSTEMS, (2008), vol. 2 br. 2, str. 213-221
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Impact of negative bias temperature instabilities on lifetime in p-channel power VDMOSFETs (Proceedings Paper)
Autori Stojadinovic Ninoslav D Dankovic Danijel M Manic Ivica Dj Davidovic Vojkan S Djoric-Veljkovic Snezana M Golubovic Snezana M 
Info TELSIKS 2007: 8TH INTERNATIONAL CONFERENCE ON TELECOMMUNICATIONS IN MODERN SATELLITE, CABLE AND BROADCASTING SERVICES, VOLS 1 AND 2, (2007), vol. br. , str. 275-282
Ispravka Web of Science   Citati: Web of Science  
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